Abstract

Stresses induced in the silicon carbide (SiC) epitaxial layer near the interface between thermal silicon oxide and 4H-SiC epitaxial substrate were measured using a near-field optical Raman microscope equipped with a hollow pyramid probe (aperture size: approximately 250 nm). The E₂ phonon was observed to undergo a 0.17 cm⁻¹ redshift owing to reduction in oxide-layer thickness from 300 nm to 0 nm; this result was compared against that obtained using a standard Raman microprobe sans the pyramidal probe. The result indicates that the epitaxial layer near the SiO₂–4H-SiC interface was maintained under a constant tensile stress of the order of 50 MPa. This agrees well with the result obtained using the finite element method (FEM). Based on results obtained using the said Raman microprobe and Fourier transform infrared (FT-IR) measurements, use of an inhomogeneity formation model at the SiO₂–4H-SiC interface has been proposed in this study.

© 2019 The Author(s)

Nanoscale residual stress-field mapping around nanoindents in SiC by IR s-SNOM and confocal Raman microscopy

Alexander M. Gigler, Andreas J. Huber, Michael Bauer, Alexander Ziegler, Rainer Hillenbrand, and Robert W. Stark
Opt. Express 17(25) 22351-22357 (2009)

Quality evaluation of homopetaxial 4H-SiC thin films by a Raman scattering study of forbidden modes

Lingyu Wan, Dishu Zhao, Fangze Wang, Gu Xu, Tao Lin, Chin-Che Tin, Zhaochi Feng, and Zhe Chuan Feng
Opt. Mater. Express 8(1) 119-127 (2018)

4H-SiC wafer slicing by using femtosecond laser double-pulses

Eunho Kim, Yasuhiko Shimotsuma, Masaaki Sakakura, and Kiyotaka Miura
Opt. Mater. Express 7(7) 2450-2460 (2017)

Temperature and doping dependence of the Raman scattering in 4H-SiC

Yan Peng, Xiaobo Hu, Xiangang Xu, Xiufang Chen, Juan Peng, Jisheng Han, and Sima Dimitrijev
Opt. Mater. Express 6(9) 2725-2733 (2016)

Long-term time dependence of internal stress in lanthanum titanium oxide (H4) optical thin films

Masashi Takegami, Ryota Nakano, and Hiroshi Murotani
Appl. Opt. 56(4) C96-C99 (2017)