Abstract

Optical properties of amorphous semiconductor films are usually strongly dependent on deposition conditions. To the best of our knowledge, this is the first publication on optical properties of amorphous Ge films that are grown by laser-assisted deposition and measured by means of spectroscopic ellipsometry over a wide spectral range (1.43–4.59 eV). Optical properties of dc magnetron-sputtered and e-beam-deposited films are also included. Effective medium modeling is used to analyze the void fraction and the film homogeneity through the thickness. The results show that laser-deposited films and dc magnetron-sputtered films are similar, both being denser, more homogeneous, and more stable than e-beam-deposited films. Transmission electron microscopy analysis shows that the results of the optical study are correlated to the film structure. These results are discussed in terms of the kinetic energy of the species involved in each deposition technique and some conclusions related to the laser-assisted deposition process are reported.

© 1992 Optical Society of America

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