Abstract

We investigate the carrier dynamics in a superlattice of self-assembled ErAs island-layers in a GaAs matrix on a picosecond timescale. We measure photocurrent autocorrelations on photoconductive switches as a function of the superlattice period. By altering the superlattice period from 100 nm to 300 nm, the response time of the switches can be tuned from 2.3 ps to 10.6 ps. This makes ErAs:GaAs a very promising candidate for future device applications such as THz sources or high-speed optoelectronic circuits.

© 2001 Optical Society of America

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