Abstract

Low noise CW laser source is required for coherent communication, sensing and detection. In this poster, we suggest GaAs based 1.55μm broad-area low relative intensity noise (RIN) laser. Semiconductor low RIN laser is generally operated in high level current density, which result in hole burning and heat problem. By implementing large cavity width with band-edge of photonic band gap, we suggest that we reduce RIN level almost down to shot noise level (< −165dB) without large current injection density. In order to obtain RIN graph, loss and group velocity of lasing mode are simulated with 1D DFB approximation.

© 2011 Optical Society of America

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