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Strong Zero-Phonon Transition from Defects in SiC Nanowires with Stacking Faults

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Abstract

We study SiC nanowires that host point defects coupled to a few-layered stacking fault. These point-planar defect complexes exhibit outstanding optical properties of high brightness, fast recombination time, and a high Debye-Waller factor.

© 2023 The Author(s)

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