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Utilizing a Maskless Process for Generating Quantum Emitter Arrays in Silicon Carbide

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Abstract

Point defects in silicon carbide are promising candidates for quantum applications as photonic and spin qubits. However, challenges remain in the effective and precise methods for creation of defect center. Here, we realized direct, maskless generation of nitrogen-vacancy center ensemble arrays in high purity 4H-SiC via helium FIB.

© 2023 The Author(s)

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