Abstract

Incorporating lower-dimensional structures such as quantum well wires (QWWs) and dots into semiconductor laser structures is expected to result in improved laser performance¹. The technique of fabrication QWWs on nonplanar substrates by metal-organic chemical vapor deposition (MOCVD) is much potential due to formation of defect-free interfaces entirely during the epitaxial growth process². With this approach, enhanced optical gain³,⁴ and ultralow threshold current²,⁵ have been demonstrated in QWW lasers. However, large QWW subband separation greater than thermal energy kBT at room temperature (~25meV) is still desirable, which should be realized by reducing wire sizes. The small wire volume, however, is disadvantageous for achieving high power light output of QWW lasers for some practical applications.

© 1995 Optical Society of America