Abstract

Self-ordering of compound semiconductor nanostructures is an attractive approach towards the realization of quantum structures. The self-ordering process obviates the need for lithography in defining the nanometer-sized structures and can in principle improve their uniformity. These attributes are particularly important in the context of low-dimensional quantum structures, e.g., quantum wires (QWRs) and quantum dots (QDs), for which dimensions in the 10-nm range and uniformity of better than 10% are desirable in order to achieve clear quantum confinement effects. Several approaches utilizing spontaneous self-ordering of nanostructures have been proposed and studied. In that case, however, the random formation sites of the wires or dots prevents the precise registration of arrays of such quantum structures. Such arrays are particularly useful in applications of such low-dimensional structures in optoelectronics.

© 1995 Optical Society of America