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We have achieved the room temperature cw lasing operation in GaInAsP/InP vertical cavity surface emitting laser diodes for the first time. By employing a buried heterostructure with a 1.3 μm range circular active region1 and a thermally conductive MgO/Si heat sink mirror, the cw lasing operation was obtained up to 14 °C, as shown in Fig. 1.
© 1993 Optical Society of America
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