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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper QTuG3

Polarization bistability in strained 1.3-μm InGaAsP/InP ridge-waveguide lasers: theory and experiment

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Abstract

The polarization of light emitted from semiconductor lasers can be strongly influenced by introduction of stress in the active layer. Especially, strained InGaAsP lasers were found to exhibit dominant TM-mode emission, TE/TM-mode coexistence as well as TE/TM-mode switching, and polarization bistability,1-3 The latter effect is of interest for device applications such as optical switches and memory for computing and signal processing.

© 1995 Optical Society of America

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