Abstract
The polarization of light emitted from semiconductor lasers can be strongly influenced by introduction of stress in the active layer. Especially, strained InGaAsP lasers were found to exhibit dominant TM-mode emission, TE/TM-mode coexistence as well as TE/TM-mode switching, and polarization bistability,1-3 The latter effect is of interest for device applications such as optical switches and memory for computing and signal processing.
© 1995 Optical Society of America
PDF ArticleMore Like This
A. Klehr, R. Müller, and M. Voss
CWF13 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995
Ch. Lienau, A. Richter, A. Klehr, and T Elsaesser
QTuJ4 European Quantum Electronics Conference (EQEC) 1996
A. Richter, Ch. Lienau, T. Elsaesser, and A. Klehr
CTuQ5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1997