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Conferences > QELS > 1995 > JWE > JWE4
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper JWE4

Carrier recombination in GalnSb/InAs mid-IR lasers

Alan Kost, Linda West, T. C. Hasenberg, and D. H. Chow

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Abstract

GaInSb/InAs superlattices hold a number of significant potential advantages relative to GalnAsSb (or InAsSb) alloys as quantum-well materials for 2-5-μm laser diodes. The heavy- and light-hole bands in the superlattices can be separated from each other by more than an energy gap, greatly reducing Auger recombination cross sections. Energy gaps out to 5 μm and well beyond are easily obtained.1

© 1995 Optical Society of America

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