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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper WEE6

Nonlinear absorption of 620-nm fs pulses near the damage threshold of silicon

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Abstract

The unique capability of ultrashort light pulses to probe the nonlinear optical properties of solids by achieving high light intensities at pulse energies low enough to avoid optical damage has been recognized for many years.1 This paper reports, we believe, the first use of femtosecond pulses to measure the direct two-photon absorption (TPA) coefficient of a semiconductor (silicon) at fundamental frequencies far above the band gap, where strong linear absorption causes longer pulses to melt the sample before reaching the intensities at which this nonlinearity becomes dominant.

© 1989 Optical Society of America

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