Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Characteristics, Packaging and Physics of Ultra High Speed Diode Lasers and Detectors

Not Accessible

Your library or personal account may give you access

Abstract

Recently high speed, high power semiconductor lasers with impulse responses of 13 ps, peak powers of tens of milliwatts, and modulation capabilities to 40 GHz have been demonstrated. These small, efficient sources are useful for fiber optic communications, microwave signal transmission for instrument, satellite and military applications, and they can serve as convenient benchtop sources for physics experiments and optical device characterization.

© 1987 Optical Society of America

PDF Article
More Like This
Microwave signal transmission with high-speed InGaAsP lasers

J. E. BOWERS
WK1 Optical Fiber Communication Conference (OFC) 1987

"High-speed buried-heterostrueture InGaAsP/InP diode lasers"

Hajime Imai
TuD1 Semiconductor Lasers (ASLA) 1987

Microwave packaging of high - speed semiconductor lasers

N. H. Zhu, S. J. Zhang, C. Chen, Y. Liu, C. Liu, E.Y.B. Pun, and P. S. Chung
IWA1 Integrated Photonics Research and Applications (IPR) 2005

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.