Abstract

Picosecond photocurrent transients have been reported in thin films of amorphous[1] and radiation-damaged[2] semiconductors. We report the first measurements of picosecond photoconductivity in 1800 A thick films of polycrystalline CdTe grown by organometallic chemical vapor deposition (OMCVD) with a grain size of approximately 200 Å. We have made high-speed photodetectors with a sampling oscilloscope limited response time of 35 psec (FWHM) with an average drift mobility of μ ≥ 11cm²/Vsec. The variation of the grain size as a means of varying the carrier relaxation time and drift mobility will be discussed.

© 1985 Optical Society of America