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Conferences > CLEO > 1986 > WK > WK12

Picosecond recombination mechanisms in polycrystalline Si thin films

W. L. Nighan, Philippe M. Faughet, and N. M. Johnson

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Abstract

Polycryslalline silicon thin films are promising for device applications. Recombination at the grain boundaries is a crucial parameter, which is a function of sample preparation. We present picosecond measurements of the lifetime of photogenerated carriers in single-crystal and polycrystalline silicon films, grown by low-pressure chemical vapor deposition (LPCVD) at 625°C. The LPCVD films are either as-grown or treated (hydrogenated, doped, or heat treated).

© 1986 Optical Society of America

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