Abstract

We demonstrate here a large-extinction-ratio wide-optical bandwidth field-induced guide/antiguide intensity modulator. Figure 1 is a schematic diagram of the device, which is fabricated from a GaAs/AlGaAs double heterostructure by forming a central waveguide electrode between two antiguide electrodes on the surface. A proton ion implantation, followed by annealing, was carried out in the areas surrounding the electrodes to make them semi-insulating. Spatial mode filters were formed at the ends of the modulator.

© 1991 Optical Society of America