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Optimal design for 1.55-μm 450-Mbit/s high-sensitivity receiver

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Abstract

For long-distance transmission systems at longer wavelengths, several kinds of photodiode and low-noise amplifier have been studied. Since a combination of an indium gallium arsenic phosphorus avalanche photodiode (InGaAsP/InP-APD) and a high-impedance preamplifier using GaAs MES-FET (FET) is expected to result in a highly sensitive receiver, we studied an optimum conditions of the receiver design.

© 1986 Optical Society of America

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