Abstract
Whereas silicon avalanche photodiodes are commonly used for short-wavelength lightwave systems, much attention has been paid to the design of PIN detectors in conjunction with low noise FET amplifiers for long-wavelength (1.3-1.6-μm) applications. There is in fact some conjecture as to whether a long-wavelength APD will provide any advantage over the PIN/FET combination. This paper will address the advantages of using an APD and describe the necessary characteristics of such a device to provide enhanced receiver performance.
© 1982 Optical Society of America
PDF ArticleMore Like This
David R. Smith, R. C. Hooper, P. P. Smyth, and M. A. Z. Rejman
TuDD6 Optical Fiber Communication Conference (OFC) 1982
Z. L. Yuan, A. W. Sharpe, J. F. Dynes, A. R. Dixon, and A. J. Shields
QThD3 Quantum Electronics and Laser Science Conference (CLEO:FS) 2010
JAMES N. HOLLENHORST
THB6 Optical Fiber Communication Conference (OFC) 1990