Abstract

Over the last several years, the technology for fabrication of long wavelength avalanche photodiodes (APDs) has matured considerably. APDs are now in volume manufacture and have become the detector of choice for most long haul high-bit-rate applications.¹ These applications place stringent demands on such device parameters as dark current, bandwidth, gain uniformity, and operating lifetime. These requirements often conflict with one another and severely constrain the device structure. Meeting the requirements at high yield demands careful optimization of the epitaxial material structure, device design, and fabrication process.

© 1990 Optical Society of America