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Conferences > OECC_PS > 2013 > MM1 > MM1_3
  • 2013 18th OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching
  • (Optica Publishing Group, 2013),
  • paper MM1_3
  • •https://doi.org/10.1364/OECC_PS.2013.MM1_3

Optimizing interdigital electrode spacing of CMOS APD for 10 Gb/s application

Toshiyuki Shimotori, Kazuaki Maekita, Ryoichi Gyobu, Takeo Maruyama, and Koichi Iiyama

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Abstract

Silicon avalanche photodiodes (APD) fabricated by 0.18 μm CMOS process with different interdigital electrode spacing were characterized at 850 nm wavelength. The largest bandwidth of 7 GHz was achieved for the APD with 1 μm electrode spacing, and the gain-bandwidth product was 270 GHz.

© 2013 IEICE

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