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  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper WP_040

Characterization of Silicon Avalanche Photodetectors Fabricated in Standard CMOS process

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Abstract

We present and characterize silicon avalanche photodetectors (APDs) fabricated with 0.18 µm standard complementary metal-oxide-semiconductor (CMOS) process. When the bias is above the avalanche breakdown voltage, the device exhibits photodetection frequency response peaking due to resonance caused by appearance of inductive components in avalanche region.

© 2007 IEEE

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