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Conferences > OECC > 1996 > 18P > 18P.23
  • First Optoelectronics and Communications Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper 18P.23

Reduction of crystal defects in II-VI semiconductor laser diodes utilizing a strained-layer superlattice and surface treatments of substrate

Jun Gotoh, Shinnichi Nakatsuka, Masayuki Momose, Akira Taike, and Masahiko Kawata

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Abstract

The crystal defects in II-VI blue-green lasers were reduced by incorporating strained-layer superlattices as the optical guiding layers and by treating GaAs substrate surface with Zn and As beams treatment under hydrogen radical irradiation.

© 1996 IEICE

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