Abstract

Blue-green laser diodes based on MgZnSSe-ZnSSe-CdZnSe separate confinement heterostructures grown lattice-matched to GaAs substrates have demonstrated performance suitable for optical data storage applications. The 3M-Philips collaboration has demonstrated index-guided devices featuring single transverse mode operation with room-temperature cw output power in excess of 40 mW per facet at wavelengths of 510-520 nm with less than 10 μm of astigmatism. Buried-ridge devices have been demonstrated with threshold currents as low as 2.5 mA. Improvements in p-type ohmic contacts have enabled threshold voltages of 3.7 V.

© 1996 Optical Society of America