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Photo-Activated Phase Transition In Antiferroelectric Thin Films For Optical Switching And Storage*

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Abstract

An electric field induced antiferroelectric (AFE)-to-ferroelectric (FE) phase transition in lead zirconate titanate (PZT) thin films was shown to produce a digital birefringent change in the materials. Such field-induced AFE-to-FE phase transitions may be influenced by the interface between the PZT thin films and certain electrode materials. It has been observed that soft-ultraviolet (UV) illumination to PZT thin films effectively lift the interfacial suppression to the phase transition. Therefore, soft-UV light may be used as a writing beam to change the polarization state of the PZT thin films via the photo-activated AFE-to-FE phase transition.

© 1994 Optical Society of America

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