Add to BibSonomyAbstract
In previous experiments with GaAs-based optical logic gates, the overall switching time of the devices was limited by the carrier relaxation time to several nanoseconds.1 The active regions of earlier devices were grown with "windows" of AIGaAs to reduce the exciton surface recombination rate. The present devices were produced from a 1.5-μm-thick GaAs layer grown by MBE without an AIGaAs window, resulting in an order-of-magnitude reduction in the recovery time.
© 1985 Optical Society of America
PDF ArticleMore Like This
A. Migus, A. Antonetti, D. Hulin, A. Mysyrowicz, N. Peyghambarian, and H. M. Gibbs
MC4 Optical Bistability (OBI) 1985
Y. H. Lee, M. Warren, G. Olbright, Hyatt M. Gibbs, N. Peyghambarian, T. Venkatesan, J. S. Smith, and Amnon Yariv
FU5 OSA Annual Meeting (FIO) 1985
Y. H. Lee, Hyatt M. Gibbs, U. Arizona, J. L. Jewell, J. F. Duffy, T. Venkatesan, A. C. Gossard, W. Wiegmann, and J. H. English
FK2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1986