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Semiconductor lasers with regrown-lens-train unstable resonators

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Abstract

We previously reported on the performance of wide-stripe semiconductor lasers with etched and regrown lens trains.1 Here, the theory and design rationale are presented. The modes are well approximated by the modes of a continuous unstable resonator with the index of refraction n = n0 + n2x2, where n2 is selected so that n is the index of refraction averaged over the longitudinal coordinate z. The radius of curvature of the wave fronts is essentially constant: R = 1 /η = (n0/2n2)1/2. The round-trip magnification is M = exp(2ηL), where L is the length of the laser. The efficiency and threshold current are derived as functions of η. We will describe a computer code that calculates the effective refractive index for various transverse structures. Measured properties of the modes are compared with the theory.

© 1992 Optical Society of America

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