1 W, near-diffraction-limited operation of regrown Sens train semiconductor lasers

S. T. Srinivasan; A. H. Paxton; S. Z. Sun; S. D. Hersee; G. C. Dente; G. C. Dente; M. L. Tilton; M. L. Tilton

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1994),
paper CMA4

1 W, near-diffraction-limited operation of regrown Sens train semiconductor lasers

S. T. Srinivasan, A. H. Paxton, S. Z. Sun, S. D. Hersee, G. C. Dente, and M. L. Tilton

Conference on Lasers and Electro-Optics 1994

Anaheim, California United States
8–13 May 1994
ISBN: 1-55752-341-X

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High-Power Diode Lasers 1 (CMA)

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S. T. Srinivasan, A. H. Paxton, S. Z. Sun, S. D. Hersee, G. C. Dente, and M. L. Tilton, "1 W, near-diffraction-limited operation of regrown Sens train semiconductor lasers," in Conference on Lasers and Electro-Optics, T. Baer, A. Smirl, J. Bowers, and D. Miller, eds., Vol. 8 of OSA Technical Digest (Optica Publishing Group, 1994), paper CMA4.

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Abstract

Spatially coherent high-power operation of diode lasers can be achieved with wide- stripe lasers using unstable resonator designs.^1,2,3 We have previously demonstrated diffraction-limited operation with 0.5 W output from a regrown lens train (RLT) unstable resonator.⁴ In this paper we present new results with higher power and good differential quantum efficiency. We will also discuss results from computer simulation, including calculation of the antiguiding parameter (a) and beam-propagation analysis. Finally, improvements in the transverse structure and an aberration correction scheme for high divergence devices will be presented.

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