Abstract

It is known that there are two mathematical models for the elliptic beams generated by semi conductor laser diodes. The first model is the simple Gaussian model,¹ in which two Gaussian distributions with different widths are employed to describe the light distribution over the elliptic cross-section of the beam. The second model is known as the Lorentzian-Gaussian model² which was established in a study of the fact that the Gaussian distribution is valid only for the light field parallel to the junction and in the perpendicular direction the field is described by the Loretzian distribution. In this paper, numerical examples are presented to clarify which one of these two models fits the measurements better, and it is shown that the simple Gaussian model has a certain advantage over the Lorentzian-Gaussian model.

© 1991 Optical Society of America