Abstract

We discuss our previous work on the computation of gain spectra and nonradiative Auger transition rates in highly excited III-V bulk semiconductors. This work was motivated by the well-documented deviation of experimental measurements of emission spectra from standard one-particle model predictions. In particular, theoretical errors arise from the large effects of the spatial correlation of the recombining particles on the line shape and on the associated deviations from the k-selection rule. We accordingly developed a nonequilibrium Green's function theory for radiative recombination in highly excited semiconductors that properly incorporates the k.p conduction and valence band structure, many-body effects associated with the electronhole interaction, and the scattering of carriers by collective excitations of the lattice. We find good agreement with the experimentally observed gain spectra as well as with the semiconductor laser linewidth broadening factor. Finally, we summarize our work on nonradiative Auger processes and contrast our results to experimental data.

© 1990 Optical Society of America