Chemical-beam epitaxy for advanced optoelectronic devices

Leslie A. Kolodziejski

doi:10.1364/OAM.1990.ThR1

Optical Society of America Annual Meeting
Technical Digest Series (Optica Publishing Group, 1990),
paper ThR1
•https://doi.org/10.1364/OAM.1990.ThR1

Chemical-beam epitaxy for advanced optoelectronic devices

Leslie A. Kolodziejski

OSA Annual Meeting 1990

Boston, Massachusetts United States
4–9 November 1990
ISBN:

From the session
Symposium on Frontiers of Photonic Materials 2: Artificially Structured Materials (ThR)

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L. A. Kolodziejski, "Chemical-beam epitaxy for advanced optoelectronic devices," in Optical Society of America Annual Meeting, Technical Digest Series (Optica Publishing Group, 1990), paper ThR1.

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Abstract

As a hybrid technology of MBE and MOCVD, chemical beam epitaxy exploits the major advantages of the two epitaxial growth techniques. The fabrication of sophistacated heterostructures and quantum-well device structures based on advanced II-VI and III-V sermiconductors will be highlighted.

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