Abstract

One approach to integrated optics is to optically couple distributed-feedback (DFB) GaAs/Aℓ_x Ga_l-x As injection lasers to other devices such as waveguides and optical switches that are grown on the same substrate. Some of these requirements can be met by using conventional liquid-phase epitaxy (LPE) processes. Despite these achievements, there are presently limitations associated with the LPE growth technique. Several such problems are the regrowth over partially completed structures, critical dimension control, and layer uniformity and reproducibility. Most of these problems can be avoided by using the molecular-beam epitaxy (MBE) vacuum deposition technique.

© 1976 Optical Society of America