Reactive evaporation and ion-assisted deposition of hafium dioxide thin films

J. P. Lehan; C. K. Hwangbo; B. G. Bovard; Y. Mao; H. Angus Macleod

doi:10.1364/OAM.1989.TUH4

Annual Meeting Optical Society of America
Technical Digest Series (Optica Publishing Group, 1989),
paper TUH4
•https://doi.org/10.1364/OAM.1989.TUH4

Reactive evaporation and ion-assisted deposition of hafium dioxide thin films

J. P. Lehan, C. K. Hwangbo, B. G. Bovard, Y. Mao, and H. Angus Macleod

OSA Annual Meeting 1989

Orlando, Florida United States
15–20 October 1989
ISBN:

From the session
Optical Thin Films: 2 (TUH)

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J. P. Lehan, C. K. Hwangbo, B. G. Bovard, Y. Mao, and H. A. Macleod, "Reactive evaporation and ion-assisted deposition of hafium dioxide thin films," in Annual Meeting Optical Society of America, Technical Digest Series (Optica Publishing Group, 1989), paper TUH4.

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Abstract

Hafnium dioxide is transparent from the ultraviolet well into the near infrared. We used a variety of deposition techniques to explore the behavior of hafnium dioxide as the growth environment of the films changed. We deposited films using conventional (nonreactive) electron-beam evaporation, reactive evaporation, and ion-assisted deposition.

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