Abstract
High-power semiconductor lasers emitting at 1.48 μm wavelength have been increasingly important as pumping light sources for Er3+ -doped fiber amplifiers [1, 2]. In this paper we report high power operation of 1.48μm GaInAsP/GalnAsP multiple quantum well (MQW) lasers which utilize strained-layer MQW structures as active layers.
© 1991 Optical Society of America
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