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Ultrahigh output power of 1.48-pm GaInAsP/GaInAsP strained-layer MQW laser diodes

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Abstract

High-power semiconductor laser diodes (LDs) emitting at 1.48-pm wavelength have become increasingly important as pumping light sources for Er+3-doped fiber amplifiers.1 Recently, introducing strained-layer quantum wells (QWs) as active layers in the LDs has been a most promising approach to enhance output power of long-wavelength LDs.2–4 In this paper, we report the optimization of the amount of strain in QWs with respect to the light output power of 1.48-μm strained-layer GaInAsP/GaInAsP MQW LDs.

© 1992 Optical Society of America

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