Abstract

Semiconductors and in particular AlGaAs, have proved to be optimum nonlinear materials when operated below the half band gap. Large phase shifts have been observed, with a minimal nonlinear absorption. The large nonlinear refractive index found in AlGaAs can also be used to observe spatial solitons, at lower power levels that have previously been employed in CS₂ and glass waveguides[1,2]. AlGaAs is thus an ideal candidate for the study and implementation of devices which utilise spatial solitons[3]. Here we report on a device which employs spatial solitons for all-optical switching[4].

© 1995 Optical Society of America