Electron Energy-Loss Spectroscopy and Reflection High-Energy Electron Diffraction Studies of the Adsorption and Pyrolysis of Si2H6 on Si (100)2x1

Y. Suda; D. Lubben; T. Motooka; J.E. Greene

doi:10.1364/MSBA.1989.MC3

Microphysics of Surfaces, Beams and Adsorbates
Technical Digest Series (Optica Publishing Group, 1989),
paper MC3
•https://doi.org/10.1364/MSBA.1989.MC3

Electron Energy-Loss Spectroscopy and Reflection High-Energy Electron Diffraction Studies of the Adsorption and Pyrolysis of Si₂H₆ on Si (100)2x1

Y. Suda, D. Lubben, T. Motooka, and J.E. Greene

Microphysics of Surfaces, Beams, and Adsorbates 1989

Salt Lake City, Utah United States
27 February–1 March 1989
ISBN:

From the session
Session 3 (MC)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
Y. Suda, D. Lubben, T. Motooka, and J. E. Greene, "Electron Energy-Loss Spectroscopy and Reflection High-Energy Electron Diffraction Studies of the Adsorption and Pyrolysis of Si2H6 on Si (100)2x1," in Microphysics of Surfaces, Beams and Adsorbates, Technical Digest Series (Optica Publishing Group, 1989), paper MC3.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

Disilane, Si₂H₆, is a promising precursor for the low-temperature deposition of Si films by chemical vapor deposition (CVD) and uv-laser-induced CVD (LCVD). It has a higher reactivity on Si surfaces and a lower decomposition temperature as well as a larger uv absorption cross section than silane (SiH₄).⁽¹⁾ We have investigated adsorption kinetics and thermally-induced reactions of Si₂H₆ on Si (100)2x1 surfaces using electron energy-loss spectroscopy (EELS) and reflection high-energy electron diffraction (RHEED).

PDF Article

More Like This

Adsorption of Disilane and Hydrogen on Si (111)-7x7 Studied by Multiple Internal Reflection Infrared Spectroscopy

K.J. Uram and U. Jansson
MC4 Microphysics of Surfaces, Beams, and Adsorbates (MSBA) 1989

Atomic Deuterium Adsorption on ultrathin Ge film deposited over Si(100)–2×1

Syed Irfan Gheyas, Tsuneo Urisu, Shinya Hirano, Mitsuhiro Nishio, and Hiroshi Ogawa
CSuD.2 Chemistry and Physics of Small-Scale Structures (CPS) 1997

Adsorption and Desorption Kinetics for Si (C2H5)2H2 on Si(111) 7x7

P.A. Coon, M.L. Wise, and S.M. George
TuB2 The Microphysics of Surfaces: Beam-Induced Processes (MSBA) 1991

Previous Article Next Article