Abstract
In previous report, an anisotropic etching of undoped poly-Si by a Hg-Xe lamp or a XeCl excimer laser in a Cl2 gas was demonstrated. However, n+ Poly-Si, which is currently used as a gate material in MOS devices, is etched isotropically by photo-dissociated Cl radicals(1). For the LSI application, the anisotropic etching for n+ Poly-Si should be also achieved.
© 1985 Optical Society of America
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