Abstract

There is an increasing need for non-destructive characterization techniques that require no special sample preparation, can be used in-situ, and provide quantitative information with good spatial resolution. The Raman microprobe fulfills these requirements. We illustrate the capabilities of the Raman microprobe by presenting results obtained on thin films after laser-induced damage, after laser or rapid thermal annealing, and on heteroepitaxial semiconductor layers. The prospects for two and three-dimensional imaging of important properties such as composition, strain, and crystalline quality or orientation are discussed.

© 1987 Optical Society of America