Abstract

Single event upset (SEU) is the phenomenon which could cause either electrical disturbance or erroneous signals on integrated circuits (ICs). While cosmic ray, e.g. heavy-ion or proton, passes through the semiconductor material in the IC, it produces charge track and generates a number of electron-hole pairs [1]. The generated carriers will be collected by the node on the MOSFET via drift and diffusion, eventually cause SEU to the IC. In the SEU testing, the particle accelerator testing is the standard method being used to characterize the SEU sensitivity of ICs [2]. Due to its high cost and inconvenience, it is suggested that pulsed laser could produce similar effect and has generated much more interest in this research field [3].

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