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Conferences > NLO > 2007 > WC > WC4

Single-Event Effects Induced by Through-Wafer Sub-Bandgap Two-Photon Absorption

Dale McMorrow, William T. Lotshaw, Joseph S. Melinger, Phillip Jenkins, Paul Eaton, Joeseph Benedetto, Matt Gadlage, John D. Davis, Reed K. Lawrence, Daniel Loveless, and Lloyd Massengill

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Abstract

Carrier generation based on nonlinear absorption in semiconductors has become an important tool for the investigation of single-event effects in modern microelectronic devices. TPA-induced single-event upset mapping and backside, through-wafer charge injection are described.

© 2007 Optical Society of America

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