Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • 2000 International Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 2000),
  • paper IPD1.5

Photon Antibunching from a Single Self-Assembled InAs Quantum Dot

Not Accessible

Your library or personal account may give you access

Abstract

Photon antibunching is a unique signature of the quantum nature of light. This phenomenon has been observed in atoms [1], single stored ions [2], molecules [3], and lately in CdSe quantum dots (QDs) [4], Here, we report the first observation of photon antibunching in the fluorescence from a single self-assembled InAs QD at 4 K. The reported experiment proves the two-level nature of the QD ground state transition and provides information on its lifetime.

© 2000 IEEE

PDF Article
More Like This
Photon antibunching from a single semiconductor quantum dot at room temperature

P. Michler, A. Imamoğlu, M. D. Mason, P. J. Carson, G. F. Strouse, and S. K. Buratto
PD7 Quantum Electronics and Laser Science Conference (CLEO:FS) 2000

Stimulated emission dynamics in self-assembled InAs/GaAs quantum dots

Christoph Lingk, G. von Plessen, J. Feldmann, K. Stock, M. Arzberger, M.-C. Amann, and G. Abstreiter
QMJ7 Quantum Electronics and Laser Science Conference (CLEO:FS) 2000

Carrier interaction in self-assembled quantum dots studied by single dot spectroscopy

T. Sugimoto, Y. Toda, S. Ishida, M. Nishioka, T. Someya, and Y. Arakawa
QTuD3 Quantum Electronics and Laser Science Conference (CLEO:FS) 2000

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.