Abstract
Photon antibunching is a unique signature of the quantum nature of light. This phenomenon has been observed in atoms [1], single stored ions [2], molecules [3], and lately in CdSe quantum dots (QDs) [4], Here, we report the first observation of photon antibunching in the fluorescence from a single self-assembled InAs QD at 4 K. The reported experiment proves the two-level nature of the QD ground state transition and provides information on its lifetime.
© 2000 IEEE
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