Abstract

We have used time-resolved luminescence measurements to determine the mechanisms responsible for the energy loss of minority electrons in highly p-doped GaAs . For such materials the luminescence rise time[l] is very short ie., < 1 ps and methods such as upconversion with femtosecond laser pulses must be used to temporally resolve the transient electron dynamics. In order to measure the electron energy loss, the hole plasma should remain at the lattice temperature so that the time evolution of the luminescence corresponds only to the electron dynamics.

© 1996 Optical Society of America