Abstract
Relaxation of photoexcited nonequilibrium carriers in semiconductors has been extensively investigated using time- resolved femtosecond techniques. These investigations have, however, focused on hot-electron relaxation dynamics, and little information has been obtained on hole scattering processes. It has been shown recently that heating of cold holes can be studied selectively in direct gap semiconductors with use of a femtosecond two-color absorption saturation technique.1 Cold-carrier heating investigation is particularly interesting because the efficiency of phonon absorption is proportional to their occupation number, carrier-phonon energy transfer is strongly dependent on the lattice temperature (in contrast to carrier cooling) and can thus be separated from other scattering processes. We have exploited this temperature dependence to study hole-optical phonon interactions in bulk GaAs.
© 1996 Optical Society of America
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