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  • XVIII International Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1992),
  • paper PTu087

Exciton Interband Transitions in GaAs Quantum Wells

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Abstract

Time-resolved photoluminescence measurements are used to investigate the lighthole exciton to heavy-hole exciton interband scattering process in a 27nm GaAs quantum well. Both exciton states lie in the bandgap, so intermediate free carrier states do not participate in the scattering process.

© 1992 IQEC

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