Abstract

We report here the first measurements of electric-field induced effects in InAs/GaAs short-period strained-layer superlattices (SPSLS). This material is of particular interest because the strain induced dislocation density is very low, allowing for integration with other structures, such as Bragg reflectors for microresonators. The optical properties are interesting because the extremely large strain experienced by the InAs bilayers within the superlattice gives rise to a quasi-confined light hole in a resonant tunnelling structure and a confined heavy hole.

© 1992 IQEC