Abstract

Mode-locked semiconductor lasers have produced ultra-short pulses in external cavity configurations by both active and passive methods. Recently, progress has been made^1–3 in combining all of the required components into a single monolithic mode-locked device. These devices operated at repetition rates above 15 GHz at 1.3 μm and 1.55 μm wavelengths. Formany applications such as electrooptic sampling, A/D converters, and OTDRs, lower repetition rates are usually necessary. The devices studied in this work have a repetition rate of 5.5 GHz at a lasting wavelength of 0.85 μm.

© 1991 Optical Society of America