Monolithically integrated ln0.53Ga0.47As receiver with voltage-tunable transimpedance

D. C. W. Lo; Y. K. Chung; S. R. Forrest

doi:10.1364/IPR.1991.TuC4

Integrated Photonics Research
Technical Digest Series (Optica Publishing Group, 1991),
paper TuC4
•https://doi.org/10.1364/IPR.1991.TuC4

Monolithically integrated ln_0.53Ga_0.47As receiver with voltage-tunable transimpedance

D. C. W. Lo, Y. K. Chung, and S. R. Forrest

Integrated Photonics Research 1991

Monterey, California United States
9–11 April 1991
ISBN:

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Optoelectronic Integrated Circuits (TuC)

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D. C. W. Lo, Y. K. Chung, and S. R. Forrest, "Monolithically integrated ln0.53Ga0.47As receiver with voltage-tunable transimpedance," in Integrated Photonics Research, Technical Digest Series (Optica Publishing Group, 1991), paper TuC4.

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Abstract

Monolithically integrated InP-based optical receivers are attractive for long-wavelength high-density optical communications. Here we reported an In_0.53Ga_0.47As receiver which consists of an In_0.53Ga_0.47As PIN photodiode and an In_0.53Ga_0.47As JFET transimpedance amplifier. The In_0.53Ga_0.47As JFETs have previously demonstrated high stability and suitable for large-scale InP-based OEICs.¹ A narrow-gate In_0.53Ga_0.47As JFET (5μm wide and 30μm long) is used as an active feedback resistor for the transimpedance amplifier. The output resistance of the narrow-gate transistor operated in its linear region can be dynamically tuned over a wide range. In addition to the active resistors, the transimpedance amplifier has a common source inverter, a level-shifter and an output buffer. Figure 1 shows the circuit diagram and photomicrograph of the monolithic receiver.

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