Abstract

Metal-semiconductor-metal (MSM) photodetectors monolithically integrated with metal-semiconductor FET (MESFET) or a high electron mobility transistor (HEMT) on GaAs is an established technology for realizing high speed optoelectronic integrated circuits (OEICs) receivers for short wavelength fiber optic systems.¹ Using this technology, transimpedance receivers have been demonstrated to exhibit a wide bandwidth and wide dynamic range for front end applications. To take advantage of the MSM-FET combination for 1.3-1.55-μm lightwave receiver systems, one has to overcome the problem of the low Schottky barrier height of metals on InGaAs. Since high leakage currents from the InGaAs MSM detectors and FETs greatly degrade the receiver performance, thin wide bandgap InAlAs semiconductor regions have been incorporated to reduce the leakage currents.² We report here the first demonstration of a MSM-HEMT transimpedance receiver fabricated from OMCVD grown InAlAs/InGaAs heterostructures.

© 1990 Optical Society of America