Abstract

Novel three-terminal field effect transistor (FET) optical waveguides are simulated to demonstrate that crystalline silicon is a credible material for guided-wave optics. Unlike LiBNO₃, silicon does not exhibit a linear electro-optic (Pocket's) effect, and second-order effects, such as the Kerr effect, are too small for practical optical switch applications. Therefore, refractive-index changes based on charge refraction are used. To create a silicon electro-optic phase modulator, the device must be able to move electrons and holes within a confined waveguiding region to induce a charge refraction effect. If a sufficient concentration of charge carriers can be injected or depleted, the refractive index of the waveguide will be altered and an electro-optic phase modulator can be designed by using the index of refraction changes induced in the waveguide.

© 1990 Optical Society of America