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Improved planar monolithic integration of an InGaAsP/InP buried-heterostructure laser diode with an enhanced barrier MESFET on InP

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Abstract

A mature optoelectronic integrated circuit (OEIC) technology is expected to offer benefits in the areas of increased functionality, improved reliability, size reduction, higher performance, and, finally, reduced cost. Although significant progress has been made in OEICs, the problem of interconnection between photonic device (e.g., laser diode, LD) and an electronic device (e.g., field-effect transistor, FET) still exists because of nonplanar topography. In this paper we will present a fabrication technology for which the above problem is eliminated.

© 1990 Optical Society of America

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